EDGE-加工製品情報 > Edge Shaping Products | TOSEI ENGINEERING CORP. > Grinding Service > Example

Example

Machine Models Used in Grinding Service: W-GM series
Edge Grinding of Silicon Wafer
Edge Grinding of Silicon Wafer
Mirror finish edge grinding of Ra = 20 nm is achieved by our helical grinding technology.
It is capable with as-cut wafer, lapped wafer and etched wafer.

Wafer Size: 2″ to 18″
Shrinking of wafer size such as 12″ ・ 8″ or 4″ ・ 3″ is also possible.

Edge Grinding of Sapphire Wafer
  • mb2
  • Edge Grinding of Sapphire Wafer
Edge Grinding of Sapphire Wafer with Flat or Notch.
Mirror finish edge grinding of Ra = 20 nm is also possible.
Edge Grinding of Special Shape Wafer
  • Edge Trimming
  • Bonded Wafer
  • Asymmetric Profile
  • Edge Trimming
  • Bonded Wafer
  • Asymmetric Profile
Various types of grinding will be possible by selection of grinding wheels and changing the grinding program. Please feel free to ask us.

Contact Us

Page Top

Edge Grinding of Compound Materials and Glass Wafer
  • Sic
  • Glass
  • SiC
  • Glass
Grinding of compound materials such as SiC, GaN, GaAs, LiTa and Glass is possible.
Mirror finish edge grinding of Ra = 20 nm is achieved by our helical grinding technology.
Ingot Rounding
Ingot Rounding
It is possible to round an ingot of compound materials or glass that thickness is around 30mm.
Edge Grinding of Tiny Wafer
Edge Grinding of Tiny Wafer
Edge grinding of wafers that diameter is less than 50mm such as lens cover is possible.
It is capable with various kinds of materials such as silicon, glass and sapphire.
Square / Rectangle Wafer Edge Grinding
  • Sapphire Cover
  • Zirconia Parts
  • Super Finishing of Edge
  • Rounding and Beveling

CFRP (Carbon Fiber Reinforced Plastic), Sapphire, SiC (Silicon Carbide), Zilconia, Lithium Tantalate.
We propose special tools and process for any materials that are difficult to cut.

Contact Us

Mirror Finish Edge Grinding for Compound Materials “IMET Process”
Mirror Finish Edge Grinding for Compound Materials IMET Process
  • Wafer edge can be mirror finished by the edge grinding process.
  • Roughness of Ra = 20 nm is achieved (SiC).
  • It reduces the cost by shortening the manufacturing process and improving the yield.
  • The recipe is optimized for each wafer material.
  • High Productivity by Higher Speed for Rough Grinding.
  • Material of Wafer: Compound Materials, Sapphire and Glass

Page Top

InquiryInquiry


Copyright © 2013 TOSEI ENGINEERING CORP. ALL RIGHTS RESERVED.
TOSEI ENGINEERING CORP.